Title :
Development of through glass via technology for 3D packaging
Author :
Takahashi, Satoshi ; Horiuchi, Keisuke ; Mori, Shinsuke ; Tatsukoshi, Kentaro ; Ono, M. ; Mikayama, Masaki ; Imajo, Nobuhiko ; Mobley, Tim
Author_Institution :
ASAHI GLASS Co., Ltd., Tokyo, Japan
Abstract :
This study explores Through Glass Via (TGV) Formation Technology for alkali-fee glass which has well matched CTE with Si. 3D Packaging has presently attracted lots of attention. The interposer is recognized as one of key materials, and its development of new fine pitch, high dense, and low cost interposer are accelerated. Glass is expected as one of candidates as material of future interposer substrate because of its good electrical properties and scalability of substrate size leading to higher loading efficiency. This study demonstrates TGV formation showed capabilities of fine pitch and high dense, and TGV formation for standard thick glass aiming varied applications for packaging such as MEMS, Optical device, and RF device. This study also demonstrates metallization for above fine pitch TGV substrate. Necessary future development and subjects are pointed out.
Keywords :
elemental semiconductors; fine-pitch technology; glass; integrated circuit metallisation; integrated circuit packaging; silicon; three-dimensional integrated circuits; vias; 3D packaging; Si; TGV formation technology; alkali free glass; electrical property; fine pitch TGV substrate; integrated circuit metallisation; interposer substrate; through glass via technology; Glass; Metallization; Packaging; Silicon; Substrates; Three-dimensional displays; Glass; Interposer;
Conference_Titel :
Microelectronics Packaging Conference (EMPC) , 2013 European
Conference_Location :
Grenoble