Experimental study on IGBT voltage and current stresses during switching transitions

Author

Das, Subhas Chandra ; Narayanan, G. ; Tiwari, Anish ; Kumar, A.K.

Author_Institution

GE Transp. Syst., GE India Tech Centre Pvt Ltd., Bangalore, India

fYear

2013

fDate

10-13 Nov. 2013

Firstpage

1

Lastpage

6

Abstract

Design of reliable power converters requires thorough understanding of the characteristics of semiconductor devices over wide range of operating and environmental conditions. This paper presents experimental investigations on switching characteristics of high-power Insulated Gate Bipolar Transistor (IGBT). The focus of this paper is to study turn-on delay time, turn-off delay time, voltage (dv/dt) stress and current (di/dt) stress of IGBT modules at different dc link voltages, load currents and operating temperatures experimentally.

Keywords

insulated gate bipolar transistors; power convertors; power semiconductor switches; IGBT current stresses; IGBT voltage stresses; dc link voltages; high-power insulated gate bipolar transistor; load currents; operating temperatures; switching transitions; turn-off delay time; turn-on delay time; Current measurement; Delays; Insulated gate bipolar transistors; Stress; Switches; Temperature measurement; Voltage measurement; Insulated Gate Bipolar Transistor; power converter; renewable energy sources; switching characteristic; switching delay time; switching stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Innovative Smart Grid Technologies - Asia (ISGT Asia), 2013 IEEE

Conference_Location

Bangalore

Print_ISBN

978-1-4799-1346-6

Type

conf

DOI

10.1109/ISGT-Asia.2013.6698788

Filename

6698788