DocumentCode
665813
Title
Comprehensive evaluation on efficiency and thermal loading of associated Si and SiC based PV inverter applications
Author
Sintamarean, C. ; Blaabjerg, Frede ; Wang, Huifang
Author_Institution
Dept. of Energy Technol., Aalborg Univ., Aalborg, Denmark
fYear
2013
fDate
10-13 Nov. 2013
Firstpage
555
Lastpage
560
Abstract
This paper deals with the design, control, efficiency and thermal cycling estimation of associated Si and SiC based three-phase PV-inverters. A novel Electro-Thermal Model able to consider the thermal coupling within the Transistor and Diode integrated on the same package is proposed. For each topology, three different cases study are simulated, according to the heatsink repartition: one-leg heatsink, shared heatsink and individual heatsink. Based on the model, it has been determined the minimum required heatsink thermal impedance in order not to overpass the device physically thermal limitations. Finally, simulation results are analyzed in order to decide which topology has a higher efficiency and a better thermal loading distribution within the devices.
Keywords
electric impedance; elemental semiconductors; heat sinks; invertors; photovoltaic power systems; semiconductor diodes; silicon; silicon compounds; transistors; wide band gap semiconductors; Si-SiC; diode; electrothermal model; heatsink repartition; heatsink thermal impedance; one-leg heatsink; shared heatsink; thermal coupling; thermal cycling estimation; thermal loading distribution; three-phase PV-inverter; transistor; Heating; Insulated gate bipolar transistors; Loading; Mathematical model; Silicon carbide; Thermal loading; Topology; Efficiency; PV-inverter; thermal loading distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics Society, IECON 2013 - 39th Annual Conference of the IEEE
Conference_Location
Vienna
ISSN
1553-572X
Type
conf
DOI
10.1109/IECON.2013.6699195
Filename
6699195
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