Title :
Performance evaluation of normaly-off SiC JFET in matrix converter without antiparrallel diodes
Author :
Safari, Saeed ; Castellazzi, Alberto ; Wheeler, Pat
Author_Institution :
PEMC Group, Univ. of Nottingham, Nottingham, UK
Abstract :
This paper deals with reverse characteristics of normally-off SiC JFET and application of it in matrix converter. Forward and reverse conduction characteristics of SiC JFET are extracted and the demands for driving it are presented. Furthermore, it is employed in 2-phase to 1-phase matrix converter with and without antiparallel SiC diode. Then static and dynamic performances of it are investigated in different conditions to present the influence of eliminating the external diode. The results and methodology provide a useful and practical tool in a SiC power converter design.
Keywords :
junction gate field effect transistors; matrix convertors; semiconductor diodes; silicon compounds; SiC; SiC power converter design; antiparallel SiC diode; antiparrallel diode; dynamic performance; forward conduction; matrix converter; normaly-off SiC JFET; reverse characteristic; reverse conduction; static performance; JFETs; Logic gates; Matrix converters; Silicon carbide; Switches; Switching frequency; Temperature measurement; SiC JFET; matrix converter; reverse conduction;
Conference_Titel :
Industrial Electronics Society, IECON 2013 - 39th Annual Conference of the IEEE
Conference_Location :
Vienna
DOI :
10.1109/IECON.2013.6699407
