DocumentCode
66666
Title
A Novel RRAM Stack With 
Double-Switching-Layer Configuration Showing Low Operation Current Through Complimentary Switching of Back-to-Back Connected S
Author
Yan Zhe Tang ; Zheng Fang ; Xin Peng Wang ; Bao Bin Weng ; Zhi Xian Chen ; Guo Qiang Lo
Author_Institution
Inst. of Microelectron., Agency for Sci., Technol. & Res., Singapore, Singapore
Volume
35
Issue
6
fYear
2014
fDate
Jun-14
Firstpage
627
Lastpage
629
Abstract
In this letter, a novel and fully CMOS compatible RRAM stack-(TiN-TaOx-Hf-HfOy-TiN) has been demonstrated. By serially connecting two back-to-back subcells, Hf-HfOy-TiN and Hf-TaOx-TiN, the cell exhibits outstanding performances, including low Imax (35 μA), stable ION (>10 μA), and IOFF (<;1 μA), and over 2 × 104 dc cycles. By examining the switching characteristics, we have confirmed the well controlled conduction/filament size during the complementary set/reset processes contributes to the stable and low current operation.
Keywords
CMOS memory circuits; hafnium; hafnium compounds; random-access storage; switching circuits; tantalum compounds; titanium compounds; CMOS compatible RRAM stack; TiN-TaOx-Hf-HfOy-TiN; back-to-back connected subcell; complementary set-reset processing; complimentary switching; current 35 muA; double-switching-layer configuration; well controlled conduction-filament size; CMOS integrated circuits; Hafnium compounds; Performance evaluation; Resistance; Switches; Tin; Resistive random access memory (RRAM); complementary resistive switch (CRS); memory devices; nonvolatile memory; nonvolatile memory.;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2014.2314093
Filename
6784014
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