DocumentCode :
66666
Title :
A Novel RRAM Stack With 
Double-Switching-Layer Configuration Showing Low Operation Current Through Complimentary Switching of Back-to-Back Connected S
Author :
Yan Zhe Tang ; Zheng Fang ; Xin Peng Wang ; Bao Bin Weng ; Zhi Xian Chen ; Guo Qiang Lo
Author_Institution :
Inst. of Microelectron., Agency for Sci., Technol. & Res., Singapore, Singapore
Volume :
35
Issue :
6
fYear :
2014
fDate :
Jun-14
Firstpage :
627
Lastpage :
629
Abstract :
In this letter, a novel and fully CMOS compatible RRAM stack-(TiN-TaOx-Hf-HfOy-TiN) has been demonstrated. By serially connecting two back-to-back subcells, Hf-HfOy-TiN and Hf-TaOx-TiN, the cell exhibits outstanding performances, including low Imax (35 μA), stable ION (>10 μA), and IOFF (<;1 μA), and over 2 × 104 dc cycles. By examining the switching characteristics, we have confirmed the well controlled conduction/filament size during the complementary set/reset processes contributes to the stable and low current operation.
Keywords :
CMOS memory circuits; hafnium; hafnium compounds; random-access storage; switching circuits; tantalum compounds; titanium compounds; CMOS compatible RRAM stack; TiN-TaOx-Hf-HfOy-TiN; back-to-back connected subcell; complementary set-reset processing; complimentary switching; current 35 muA; double-switching-layer configuration; well controlled conduction-filament size; CMOS integrated circuits; Hafnium compounds; Performance evaluation; Resistance; Switches; Tin; Resistive random access memory (RRAM); complementary resistive switch (CRS); memory devices; nonvolatile memory; nonvolatile memory.;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2014.2314093
Filename :
6784014
Link To Document :
