Title :
Optimization of a Pocketed Dual-Metal-Gate TFET by Means of TCAD Simulations Accounting for Quantization-Induced Bandgap Widening
Author :
Beneventi, Giovanni Betti ; Gnani, Elena ; Gnudi, A. ; Reggiani, S. ; Baccarani, G.
Author_Institution :
Dept. of Electr., Electron. & Inf. Eng., Univ. of Bologna, Bologna, Italy
Keywords :
MOSFET; energy gap; technology CAD (electronics); tunnel transistors; tunnelling; DMG TFET; DMG-TFET performance; TCAD simulations; device design options; dual-metal-gate tunnel FET; heavily-doped pocket; negative impact; quantization-induced bandgap widening; reduced tunneling probability; Doping; Junctions; Logic gates; Mathematical model; Performance evaluation; Photonic band gap; Tunneling; Band-to-band tunneling (BTBT); InAs; dual-metal gate (DMG); line TFET; pocket; quantization; steep subthreshold slope (SSS); tunnel FETs (TFETs); tunnel FETs (TFETs).;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2371071
