Title :
Feasibility of a cryogenic SiGe amplifier at 4 k
Author :
Aberg, Markku ; Saijets, Jan
Author_Institution :
Sensing & Wireless Devices, VTT, Espoo, Finland
Abstract :
The feasibility of an integrated SiGe amplifier with 1 GHz band width and 30 dB gain for cryogenic temperatures has been studied. The standard models do not simulate special low temperature phenomena and give erroneous results below 50 K. We have circumvented this problem by using an experimentally defined “effective temperature” in simulations. Thereafter we have studied a cascade amplifier topology with trade-offs between gain, noise figure, band width, area and power consumption.
Keywords :
Ge-Si alloys; amplifiers; cryogenic electronics; semiconductor materials; bandwidth 1 GHz; cascade amplifier topology; cryogenic silicon germanium amplifier; cryogenic temperatures; effective temperature; gain 30 dB; integrated silicon germanium amplifier; noise figure; power consumption; temperature 4 K; Cryogenics; Heterojunction bipolar transistors; Integrated circuit modeling; Noise; Noise figure; Temperature; SiGe; amplifier; cryogenic; integrated circuit;
Conference_Titel :
NORCHIP, 2013
Conference_Location :
Vilnius
DOI :
10.1109/NORCHIP.2013.6702011
