A simple all MOS voltage reference for RFID applications

In recent years Radio Frequency Identification (RFID) systems have become very popular in a number of applications. RFID is an example of mixed signal integrated circuit. Voltage reference is an important circuit for various modules like power generation unit, data converter units of RFID. The basic requirement of reference circuits is a simple architecture with low power consumption and high stability. In this work we are proposing the reference circuit in which output voltage is based on the difference between the gate-source voltages of two NMOS transistors. The proposed voltage reference circuit generates a simulated reference voltage of 610mV with a temperature coefficient of 10.5 ppm/°C for the temperature range of -40°C to 110°C. The maximum power consumption of the proposed circuit is 3μW simulated at a supply voltage of 2V. The line regulation is 0.25mV/V for the supply voltage range from 1.25V to 2V and the PSRR@100Hz is 69 to 75dB. The proposed circuit is implemented using a 180nm standard CMOS technology.