• DocumentCode
    667770
  • Title

    Phase noises of GaN-based surface acoustic wave oscillator

  • Author

    Miskinis, Rimantas ; Urba, Emilis ; Smirnov, D. ; Sereika, A. ; Rimeika, R. ; Ciplys, D.

  • Author_Institution
    Metrol. Dept., Center for Phys. Sci. & Technol., Vilnius, Lithuania
  • fYear
    2013
  • fDate
    21-25 July 2013
  • Firstpage
    179
  • Lastpage
    181
  • Abstract
    Gallium nitride (GaN) is of interest with respect to electronics as it features both semiconducting and piezoelectric properties. We explore the possibilities for employing a GaN-based surface acoustic wave oscillator as a sensor of ultraviolet radiation, consider its thermal properties and phase noise.
  • Keywords
    III-V semiconductors; gallium compounds; phase noise; semiconductor device noise; surface acoustic wave oscillators; ultraviolet detectors; wide band gap semiconductors; GaN; GaN-based surface acoustic wave oscillator; phase noise; thermal properties; ultraviolet radiation sensor; Cooling; Gallium nitride; Lighting; Phase noise; Surface acoustic waves; Temperature sensors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    European Frequency and Time Forum & International Frequency Control Symposium (EFTF/IFC), 2013 Joint
  • Conference_Location
    Prague
  • Type

    conf

  • DOI
    10.1109/EFTF-IFC.2013.6702130
  • Filename
    6702130