Title :
Power Electronic Devices in the Future
Author :
Hudgins, Jerry L.
Author_Institution :
Electr. Eng. Dept., Univ. of Nebraska, Lincoln, NE, USA
Abstract :
This paper discusses extrapolations of current silicon power device technology into the future, followed by discussions of wide band gap (WBG) power devices with a focus on silicon carbide and gallium nitride. Other WBG materials are included from carbon, such as diamond and nanotubes, to various nitrides. Far future material development, that may impact power electronic devices decades out, is also discussed.
Keywords :
III-V semiconductors; gallium compounds; power semiconductor devices; silicon compounds; wide band gap semiconductors; GaN; SiC; WBG materials; carbon nanotubes; diamond; extrapolations; power electronic devices; silicon power device technology; wideband gap power devices; Carbon nanotubes; Diamonds; Gallium nitride; Power semiconductor devices; Silicon carbide; Wide band gap semiconductors; Carbon nanotubes; diamond; gallium nitride (GaN); power semiconductor devices; silicon carbide (SiC); wide band gap semiconductors;
Journal_Title :
Emerging and Selected Topics in Power Electronics, IEEE Journal of
DOI :
10.1109/JESTPE.2013.2260594
