Title :
Stress-enhanced chemical vapor deposited graphene NEMS RF resonators
Author :
Lekas, Michael ; Sunwoo Lee ; Changyao Chen ; Cha, Woo-Jun ; Ayyagari, Karthik ; Hone, James ; Shepard, Kenneth
Author_Institution :
Dept. of Electr. Eng., Columbia Univ. in the city of New York, New York, NY, USA
Abstract :
In this work we present room-temperature measurements of graphene nanoelectromechanical resonators (GN-ERs) demonstrating quality factors (Qs) greater than 200 at resonance. A nominal resonant frequency (fo) of 200 MHz is attained by applying strain to the suspended graphene using an SU-8 polymer clamp. Additionally, the device fo can be tuned by more than 5% by application of a DC gate bias on the order of 5V. Chemical vapor deposited (CVD) graphene is used to demonstrate the scalability of the process.
Keywords :
Q-factor; UHF resonators; chemical vapour deposition; circuit tuning; graphene; nanoelectromechanical devices; C; DC gate bias application; SU-8 polymer clamp; graphene NEMS RF resonators; nanoelectromechanical resonators; nominal resonant frequency; quality factors; stress-enhanced chemical vapor deposition; temperature 293 K to 298 K; Clamps; Graphene; Logic gates; Pollution measurement; Radio frequency; Semiconductor device measurement; Strain;
Conference_Titel :
European Frequency and Time Forum & International Frequency Control Symposium (EFTF/IFC), 2013 Joint
Conference_Location :
Prague
DOI :
10.1109/EFTF-IFC.2013.6702216
