Title :
Enhanced temperature sensitivity of a single CMOS-MEMS resonator via resonant modes in orthogonal axes
Author :
Ming-Huang Li ; Chao-Yu Chen ; Cheng-Syun Li ; Chi-Hang Chin ; Sheng-Shian Li
Author_Institution :
Inst. of NanoEngineering & Microsyst., Nat. Tsing Hua Univ., Hsinchu, Taiwan
Abstract :
A novel CMOS-MEMS composite ring resonator capable of a dual-mode operation has been proposed to enable self-temperature sensing in a single device. To maximize the temperature sensitivity between the dual modes, two resonant modes of a single resonator vibrating in orthogonal axes (i.e., inplane and out-of-plane) are chosen due to the large difference of their temperature coefficients of frequency (TCf´s). By adjusting the constituent ratio and the position of metals and dielectrics through CAD layouts, different TCf´s have been successfully demonstrated in a single CMOS-MEMS resonator. By measuring the TCf´s of the in-plane (INP) and out-of-plane (OOP) mode concurrently, a beat frequency with a temperature coefficient of 72 ppm/°C was characterized. By employing a divider-based scaling concept, an estimated maximum beat frequency sensitivity of 3,244 ppm/°C can be obtained under proper scaling numbers.
Keywords :
CMOS integrated circuits; integrated circuit layout; micromechanical resonators; microsensors; temperature sensors; CAD layouts; CMOS-MEMS composite ring resonator; beat frequency sensitivity; divider-based scaling concept; dual-mode operation; in-plane mode; orthogonal axes; out-of-plane mode; resonant modes; self-temperature sensing; temperature coefficients; temperature sensitivity; Electrodes; Frequency measurement; Indium phosphide; Optical resonators; Resonant frequency; Sensitivity; Temperature sensors; CMOS-MEMS; back-end of line (BEOL); beat frequency; dual-mode; resonators;
Conference_Titel :
European Frequency and Time Forum & International Frequency Control Symposium (EFTF/IFC), 2013 Joint
Conference_Location :
Prague
DOI :
10.1109/EFTF-IFC.2013.6702251