Title :
Low temperature (<180 °C) bonding for 3D integration
Author :
Yan-Pin Huang ; Ruoh-Ning Tzeng ; Yu-San Chien ; Ming-Shaw Shy ; Teu-Hua Lin ; Kou-Hua Chen ; Ching-Te Chuang ; Wei Hwang ; Chi-Tsung Chiu ; Ho-Ming Tong ; Kuan-Neng Chen
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Three types of bonding, including Cu-In, Sn/In-Cu, and Cu/Ti-Ti/Cu, are investigated for the application of 3D interconnects. Cu-In bonding and Sn/In-Cu bonding can form intermetallic compounds at the bonding temperature lower than 180 °C. In addition, for Cu/Ti-Ti/Cu bonding, Cu can be protected from oxidation by capping Ti on Cu surface before bonding. This method can further decrease bonding temperature. All bonded structures have shown excellent electrical performance and reliability characteristics. Based on bond results, these structures can be applied for low temperature bonding in 3D interconnects.
Keywords :
copper alloys; indium alloys; integrated circuit bonding; integrated circuit interconnections; three-dimensional integrated circuits; tin alloys; titanium alloys; 3D integration; 3D interconnects; Cu-In; CuTi-TiCu; Sn-InCu; intermetallic compounds; low temperature bonding technology; oxidation; three-dimensional integrated circuits; Bonding; Electrical resistance measurement; Reliability; Resistance; Temperature measurement; Three-dimensional displays; Tin; 3D integration; Bonding technology; interconnects;
Conference_Titel :
3D Systems Integration Conference (3DIC), 2013 IEEE International
Conference_Location :
San Francisco, CA
DOI :
10.1109/3DIC.2013.6702319
