DocumentCode :
667955
Title :
Analysis of glass interposer PDN and proposal of PDN resonance suppression methods
Author :
Jonghyun Cho ; Youngwoo Kim ; Joungho Kim ; Sundaram, Venky ; Tummala, Rao
Author_Institution :
Dept. of Electr. Eng., KAIST, Daejeon, South Korea
fYear :
2013
fDate :
2-4 Oct. 2013
Firstpage :
1
Lastpage :
5
Abstract :
Electrical characteristics of glass interposer PDN is analyzed and compared with silicon interposer. Because of the low loss of glass substrate compared to silicon substrate, glass interposer has much smaller loss than silicon interposer. It helps low-loss signaling, but it generates sharp PDN resonance unlike silicon interposer. If glass interposer signal line has through-glass via (TGV), it experiences high loss at the resonance frequency. Also P/G noise is easily coupled to signal line and vice versa at that frequency. It would be problems for the glass interposer PDN design. To overcome these problems of glass interposer, several resonance suppression methods are proposed such as decoupling capacitor scheme, ground via.
Keywords :
elemental semiconductors; glass; integrated circuit interconnections; silicon; three-dimensional integrated circuits; PDN resonance suppression methods; TGV; decoupling capacitor scheme; glass interposer PDN design; ground via; power distribution network; silicon interposer; through glass via; Capacitors; Couplings; Glass; Insertion loss; Noise; Resonant frequency; Silicon; PDN; glass; interposer; resonance; resonance suppr ession; silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
3D Systems Integration Conference (3DIC), 2013 IEEE International
Conference_Location :
San Francisco, CA
Type :
conf
DOI :
10.1109/3DIC.2013.6702320
Filename :
6702320
Link To Document :
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