DocumentCode
667955
Title
Analysis of glass interposer PDN and proposal of PDN resonance suppression methods
Author
Jonghyun Cho ; Youngwoo Kim ; Joungho Kim ; Sundaram, Venky ; Tummala, Rao
Author_Institution
Dept. of Electr. Eng., KAIST, Daejeon, South Korea
fYear
2013
fDate
2-4 Oct. 2013
Firstpage
1
Lastpage
5
Abstract
Electrical characteristics of glass interposer PDN is analyzed and compared with silicon interposer. Because of the low loss of glass substrate compared to silicon substrate, glass interposer has much smaller loss than silicon interposer. It helps low-loss signaling, but it generates sharp PDN resonance unlike silicon interposer. If glass interposer signal line has through-glass via (TGV), it experiences high loss at the resonance frequency. Also P/G noise is easily coupled to signal line and vice versa at that frequency. It would be problems for the glass interposer PDN design. To overcome these problems of glass interposer, several resonance suppression methods are proposed such as decoupling capacitor scheme, ground via.
Keywords
elemental semiconductors; glass; integrated circuit interconnections; silicon; three-dimensional integrated circuits; PDN resonance suppression methods; TGV; decoupling capacitor scheme; glass interposer PDN design; ground via; power distribution network; silicon interposer; through glass via; Capacitors; Couplings; Glass; Insertion loss; Noise; Resonant frequency; Silicon; PDN; glass; interposer; resonance; resonance suppr ession; silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
3D Systems Integration Conference (3DIC), 2013 IEEE International
Conference_Location
San Francisco, CA
Type
conf
DOI
10.1109/3DIC.2013.6702320
Filename
6702320
Link To Document