Title :
Cost-effective temporary bonding and debonding material solution towards high-volume manufacturing 2.5D/3D through-silicon via integrated circuits
Author :
Civale, Y. ; Meynen, Herman ; John, Ranjith S. E. ; Peng-Fei Fu ; Yeakle, Craig R. ; Sheng Wang ; Krausse, Stefan ; Rapps, Thomas ; Lutter, Stefan
Author_Institution :
Dow Corning Eur. S.A., Seneffe, Belgium
Abstract :
Dow Corning developed a silicone-based room temperature temporary bonding and mechanical debonding solution to overcome the current limitations of existing materials and processes for next generation of 2.5D & 3D IC packages; The material properties make possible the use of a simple process sequence which includes material spin coating, room temperature bonding and mechanical debonding. Whereas the Dow Corning bi-layer approach has been reported recently [1], this study focuses on bonding and debonding performance obtained with SUSS MicroTec automated bonding and debonding equipment and for adhesive layer thickness in the range of 100 μm. The results reported in this study, particularly the good process control and ability to debond with a low force (<;30 N) while keeping the overall sequence short and thus cost-effective, make the Dow Corning temporary bonding and debonding approach a versatile solution towards the validation of the TSV technology for a wide range of 2.5D and 3D stacked ICs applications.
Keywords :
adhesive bonding; elemental semiconductors; integrated circuit bonding; silicon; spin coating; three-dimensional integrated circuits; wafer level packaging; 2.5D integrated circuits; 3D through-silicon via integrated circuits; TSV technology; adhesive layer; automated bonding; cost-effective temporary bonding; debonding material solution; debonding performance; high-volume manufacturing; integrated circuit packages; material spin coating; mechanical debonding; size 100 mum; temperature 293 K to 298 K; Bonding; Silicon; Thickness measurement; Three-dimensional displays; Through-silicon vias; 2. 5D / 3D stacked ICs; Mechanical debonding; Room-temperature bonding; Silicone materials; Temporary bonding; Through-Silicon Vias (TSVs); Wafer Level Packaging; cost-of-ownership;
Conference_Titel :
3D Systems Integration Conference (3DIC), 2013 IEEE International
Conference_Location :
San Francisco, CA
DOI :
10.1109/3DIC.2013.6702330