Active pixel sensors with enhanced pixel-level analog and digital functionalities in a 2-tier 3D CMOS technology

Author

Re, V. ; Manghisoni, Massimo ; Traversi, Gianluca ; Gaioni, L. ; Manazza, Alessia ; Ratti, Lodovico

Author_Institution

Dipt. di Ing., Univ. di Bergamo, Dalmine, Italy

fYear

2013

fDate

2-4 Oct. 2013

Firstpage

1

Lastpage

7

Abstract

This paper presents the results of the characterization of novel CMOS active pixel sensors that take advantage of 3D integration to increase the electronic functions in the pixel readout cells. These sensors were designed in the frame of an R&D program targeting applications to high energy physics experiments at advanced particle accelerators. They were fabricated with the Tezzaron/GlobalFoundries 3D process, which makes it possible to build two-tier integrated circuits by the face-to-face bonding of two 130 nm CMOS wafers. High-density “via middle” TSVs and small-pitch Cu-Cu interconnections between tiers make this process suitable for aggressive mixed-signal circuit design.

Keywords

CMOS image sensors; bonding processes; copper; integrated circuit design; integrated circuit interconnections; mixed analogue-digital integrated circuits; particle accelerators; readout electronics; three-dimensional integrated circuits; 3D CMOS technology; CMOS wafers; Cu-Cu; TSV; Tezzaron/GlobalFoundries 3D process; active pixel sensors; advanced particle accelerators; face-to-face bonding; mixed-signal circuit design; pixel readout cells; size 130 nm; small-pitch Cu-Cu interconnections; two-tier integrated circuits; CMOS integrated circuits; Detectors; Electrodes; Noise; Preamplifiers; Three-dimensional displays; 3D integration; CMOS sensors; noise; pixel detectors;

fLanguage

English

Publisher

ieee

Conference_Titel

3D Systems Integration Conference (3DIC), 2013 IEEE International

Conference_Location

San Francisco, CA

Type

conf

DOI

10.1109/3DIC.2013.6702333

Filename

6702333