Which interconnects for which 3D applications? Status and perspectives

Author

Lamy, Yann ; Colonna, J.P. ; Simon, Gael ; Leduc, Pascal ; Cheramy, S. ; Laviron, C.

Author_Institution

LETI, CEA, Grenoble, France

fYear

2013

fDate

2-4 Oct. 2013

Firstpage

1

Lastpage

6

Abstract

Some 3D interconnects technologies are reviewed and discussed in this paper with respect to emerging 3D applications. While 2.5D Si interposer and 3D packaging seem to rely to cu pillars for the coming years, the very fine pitch below 10μm will be mandatory for 3DIC and many options like cu-cu bonding or μ-tubes are in the race. Specific interconnects for RF/mm-waves and low volume electronics devices are also discussed with relevant examples.

Keywords

copper; elemental semiconductors; fine-pitch technology; integrated circuit bonding; integrated circuit design; integrated circuit interconnections; integrated circuit packaging; silicon; three-dimensional integrated circuits; μ-tubes; 2.5D Si interposer; 3D applications; 3D interconnects technologies; 3D packaging; 3DIC; Cu; RF-mm-waves; Si; cu pillars; cu-cu bonding; low volume electronics devices; Aluminum; Bonding; Photonics; Radio frequency; Silicon; Stacking; Three-dimensional displays; μ-inserts; μ-tube; 3D interconnects; Back-to-Face; Cu pillars; SLID; Transient-Liquid Phase; cu-cu bonding; stacking;

fLanguage

English

Publisher

ieee

Conference_Titel

3D Systems Integration Conference (3DIC), 2013 IEEE International

Conference_Location

San Francisco, CA

Type

conf

DOI

10.1109/3DIC.2013.6702344

Filename

6702344