Analysis of hot carrier and NBTI induced device degradation on CMOS ring oscillator

Author

Hui Zhang ; Chunzhi Liu ; Tao Wang ; Hua Zhang ; Chenhui Zeng

Author_Institution

Quality Eng. Center, China Aero-Polytechnology Establ., Beijing, China

fYear

2013

fDate

20-22 Nov. 2013

Firstpage

141

Lastpage

144

Abstract

The degradation of CMOS ring oscillator caused by hot carrier and negative bias temperature instability (NBTI) is presented in this paper. These two degradation mechanisms deteriorate the oscillator´s start-up reliability and the oscillation frequency by threshold voltage (V_th) degradation. According to impact analysis, an improved ring oscillator is proposed which is insensitive to degradation. The SPICE simulation shows that the oscillator has better start-up reliability and frequency stability.

Keywords

CMOS integrated circuits; frequency stability; hot carriers; integrated circuit reliability; negative bias temperature instability; oscillators; CMOS ring oscillator; NBTI induced device degradation; SPICE simulation; frequency stability; hot carriers; impact analysis; negative bias temperature instability; oscillator start-up reliability; threshold voltage degradation; Degradation; Hot carriers; Inverters; Reliability; Ring oscillators; Threshold voltage; CMOS ring oscillator; NBTI; degradation; hot carrier;

fLanguage

English

Publisher

ieee

Conference_Titel

Consumer Electronics, Communications and Networks (CECNet), 2013 3rd International Conference on

Conference_Location

Xianning

Print_ISBN

978-1-4799-2859-0

Type

conf

DOI

10.1109/CECNet.2013.6703292

Filename

6703292