DocumentCode :
670667
Title :
Strained Si nanowire tunnel FETs and inverters
Author :
Zhao, Q.T. ; Knoll, Lars ; Richter, Simon ; Schmidt, Martin ; Blaeser, Sebastian ; Luong, Gia Vinh ; Wirths, Stephan ; Nichau, A. ; Schafer, Andreas ; Trellenkamp, Stefan ; Hartmann, J.-M. ; Bourdelle, Konstantin K. ; Buca, Dan ; Mantl, Siegfried
Author_Institution :
Peter Grunberg Inst. 9 (PGI-9/IT), Forschungszentrum Julich, Julich, Germany
fYear :
2013
fDate :
28-29 Oct. 2013
Firstpage :
1
Lastpage :
2
Abstract :
Steep slope devices, like Tunnel FETs (TFETs), provide small subthreshold slope (SS) <;60mV/dec at 300K and low Ioff, enabling low consumptions of both dynamic and static power. Simulations of TFETs show higher (x8) performance at VDD ~ 0.3 V than MOSFETs at the same standby power and switching energy [1].
Keywords :
elemental semiconductors; field effect transistors; invertors; nanowires; power consumption; silicon; tunnel transistors; Si; dynamic power consumption; inverters; standby power; static power consumption; steep slope devices; strained Si nanowire tunnel FET; switching energy; temperature 300 K; Decision support systems; Field effect transistors; Inverters; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Energy Efficient Electronic Systems (E3S), 2013 Third Berkeley Symposium on
Conference_Location :
Berkeley, CA
Type :
conf
DOI :
10.1109/E3S.2013.6705867
Filename :
6705867
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=670667
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