Title :
Quantum membranes: A new materials platform for future electronics
Author_Institution :
Electr. Eng. & Comput. Sci., UC Berkeley, Berkeley, CA, USA
Abstract :
Over the past several years, the inherent scaling limitations of electron devices have fueled the exploration of high carrier mobility semiconductors as a Si replacement to further enhance the device performance. To ensure effective gate control, semiconductors with ultrathin body thickness are needed. At such regime, strong quantum confinement usually comes into play; therefore, we call these ultrathin compound semiconductor membranes as quantum membranes (QMs). Compound quantum membranes heterogeneously integrated on Si substrates have been studied by us, combining the high mobility of compound semiconductors and the well-established Si technology.
Keywords :
carrier mobility; elemental semiconductors; membranes; silicon; Si; Si substrates; effective gate control; electron devices; high carrier mobility semiconductors; materials platform; quantum confinement; quantum membranes; ultrathin body thickness; ultrathin compound semiconductor membranes; Compounds; Doping; Field effect transistors; Logic gates; Silicon;
Conference_Titel :
Energy Efficient Electronic Systems (E3S), 2013 Third Berkeley Symposium on
Conference_Location :
Berkeley, CA
DOI :
10.1109/E3S.2013.6705869