Title :
Tunnel FETs with tunneling normal to the gate
Author :
Xing, Huili Grace ; Guangle Zhou ; Mingda Li ; Yiqing Lu ; Rui Li ; Wistey, M. ; Fay, Patrick ; Jena, D. ; Seabaugh, Alan
Author_Institution :
Electr. Eng. Dept., Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
Summary form only given. In this talk, I will review some of the recent development of tunnel field effect transistors (TFETs) at Notre Dame [1-8]. Tunnel FETs are promising replacements of Si-MOSFETs beyond 2020 due to their promise to achieve Ion/Ioff > 103 with Ion > 100 uA/um at low supply voltages (up to 0.5 V). To date we have demonstrated Ion/Ioff ~ 106, Ion ~ 180 uA/um, separately, based on III-V heterostructures. Challenges ahead include electrostatic control, defect-assisted tunneling and interface state density and parasitics. More recently, we have started to investigate 2D crystal based TFETs for their promises to realize ultrascaled electronic switches.
Keywords :
electrostatics; field effect transistors; interface states; low-power electronics; tunnel transistors; 2D crystal based TFETs; III-V heterostructures; defect-assisted tunneling; electrostatic control; interface state density; tunnel FETs; tunnel field effect transistors; ultrascaled electronic switches; Field effect transistors; Indium gallium arsenide; Indium phosphide; Logic gates; Nanoelectronics; Tunneling;
Conference_Titel :
Energy Efficient Electronic Systems (E3S), 2013 Third Berkeley Symposium on
Conference_Location :
Berkeley, CA
DOI :
10.1109/E3S.2013.6705871
