DocumentCode :
67088
Title :
Circuit Level Modeling of Extra Combinational Delays in SRAM-Based FPGAs Due to Transient Ionizing Radiation
Author :
Darvishi, Mostafa ; Audet, Yves ; Blaquiere, Yves ; Thibeault, Claude ; Pichette, Simon ; Tazi, Fatima Zahra
Author_Institution :
Electr. Eng. Dept., Ecole Polytech., Montreal, QC, Canada
Volume :
61
Issue :
6
fYear :
2014
fDate :
Dec. 2014
Firstpage :
3535
Lastpage :
3542
Abstract :
This paper presents circuit level models that explain the extra combinational delays in a SRAM-based FPGA (Virtex-5) due to Single Event Upsets (SEUs). Several scenarios of extra combinational delays are simulated based on the circuit architecture of the FPGA core, namely Configurable Logic Blocks (CLBs) and routing. It is found that the main delay contribution originates from extra interconnection lines that are unintentionally connected to the main circuit path via pass transistors activated by SEUs. Moreover, longer delay faults observed on Input/Ouput Blocks (IOBs) due to SEU were investigated through simulations. In all cases, results are in close agreement with the ones obtained experimentally while exposing the FPGA to proton irradiation.
Keywords :
SRAM chips; combinational circuits; delays; field programmable gate arrays; integrated circuit interconnections; integrated circuit modelling; radiation hardening (electronics); CLBs; IOBs; SEUs; SRAM-Based FPGAs; Virtex-5; circuit architecture; circuit level modeling; circuit path; configurable logic blocks; delay faults; extra combinational delays; extra interconnection lines; input-ouput blocks; pass transistors; proton irradiation; routing; single event upsets; transient ionizing radiation; Delays; Field programmable gate arrays; Integrated circuit interconnections; Integrated circuit modeling; Ionizing radiation; SRAM cells; Single event upsets; Transistors; Configurable logic element; IBIS model; Input/Ouput Blocks (IOBs); SRAM-based FPGA; extra combinational delays; observed delay change (ODC); single event upset (SEU);
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2014.2369424
Filename :
6971238
Link To Document :
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