Fast all-optical 10 Gb/s NRZ wavelength conversion and power limiting function using hybrid InP on SOI nanocavity

Author

Lengle, Kevin ; Gay, M. ; Bazin, Alexandre ; Sagnes, I. ; Braive, R. ; Monnier, Paul ; Bramerie, L. ; Nguyen, Tam-Nguyen ; Pareige, Christelle ; Madec, R. ; Simon, J.-C. ; Raj, Ranga ; Raineri, Fabrice

Author_Institution

Univ. Eur. de Bretagne (UEB), Rennes, France

fYear

2012

fDate

16-20 Sept. 2012

Firstpage

1

Lastpage

3

Abstract

A new optical switch is presented using InP/SOI hybrid photonic crystal nanocavity. Switching contrast of 11 dB with 20 mW peak power and recovery time of 14 ps are measured. NRZ wavelength conversion and power limiter are demonstrated at 10 Gb/s through system experiments with 6 and 1 mW peak power respectively.

Keywords

III-V semiconductors; indium compounds; integrated optics; integrated optoelectronics; nanophotonics; optical switches; optical wavelength conversion; photonic crystals; silicon-on-insulator; InP-Si; bit rate 10 Gbit/s; fast all-optical NRZ wavelength conversion; hybrid InP-on-SOI nanocavity; hybrid photonic crystal nanocavity; nonreturn-to-zero wavelength conversion; optical switch; power 1 mW; power 20 mW; power limiter; power limiting function; switching contrast; time 14 ps; Bit error rate; Cavity resonators; Noise; Optical switches; Optical waveguides; Optical wavelength conversion; Probes;

fLanguage

English

Publisher

ieee

Conference_Titel

Optical Communications (ECOC), 2012 38th European Conference and Exhibition on

Conference_Location

Amsterdam

Type

conf

Filename

6706280