DocumentCode :
671150
Title :
A low voltage low power 3.5/5.8 GHz dual-band common gate Low Noise Amplifier
Author :
Zokaei, Abolfazl ; Amirabadi, Amir
Author_Institution :
Dept. of Electr. Eng., Islamic Azad Univ., Tehran, Iran
fYear :
2013
fDate :
25-27 Sept. 2013
Firstpage :
93
Lastpage :
96
Abstract :
This paper presents the design and simulation results of a tunable multi-band Low Noise Amplifier (LNA) for mobile WiMAX (IEEE 802.16e) using 0.18μm CMOS process. The target frequency bands are considered to be (3.4~3.6) GHz and (5.2~5.9) GHz. A technique known as Active Post Distortion (APD) was used to improve the linearity and offers optimum noise figure for the system. It provides a third order intercept point of about -1.3 dBm and -5.2 dBm for lower and upper bands respectively. It provides a power gain of more than 12.9 dB, input reverse isolation and noise figure of below -10.3 dB and 3.3 dB respectively. Considering a power supply of 1 v it dissipates 9.12 mw.
Keywords :
CMOS analogue integrated circuits; MMIC amplifiers; circuit tuning; field effect MMIC; low noise amplifiers; low-power electronics; CMOS process; IEEE 802.16e; LNA; active post distortion; frequency 3.4 GHz to 5.9 GHz; low power dual-band common gate low noise amplifier; low voltage dual-band common gate low noise amplifier; mobile WiMAX; power 9.12 mW; power supply; size 0.18 mum; tunable multiband low noise amplifier; voltage 1 V; CMOS integrated circuits; Dual band; Linearity; Logic gates; Low-noise amplifiers; Noise; Noise measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro and Nanoelectronics (RSM), 2013 IEEE Regional Symposium on
Conference_Location :
Langkawi
Print_ISBN :
978-1-4799-1181-3
Type :
conf
DOI :
10.1109/RSM.2013.6706481
Filename :
6706481
Link To Document :
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