DocumentCode :
671178
Title :
Fabrication of silicon nitride ion sensitive field-effect transistor (ISFET)
Author :
Chong Soon Weng ; Hashim, U. ; Wei-Wen Liu
Author_Institution :
Inst. of Nano-Electron. Eng. (INEE), Univ. Malaysia Perlis (UniMAP), Kangar, Malaysia
fYear :
2013
fDate :
25-27 Sept. 2013
Firstpage :
204
Lastpage :
207
Abstract :
In this work, the fabrication of silicon nitride ion sensitive field-effect transistor is presented. The ISFET structure is similar to metal oxide semiconductor field-effect transistor (MOSFET) but the gate metal electrode is replaced by a layer of ion sensitive material, also known as the sensing membrane. The fabrication process utilized four masks which consist of the source and drain, gate, contacts and metal mask. The buffered oxide etch was used for etching the silicon oxide and silicon nitride as it is easily available in the cleanroom. In this work, the self-aligned method was used to fabricate the ISFET and this method has shortened the fabrication step as compared to conventional fabrication method. The sample was inspected using high powered microscope after each step of the fabrication and has shown convincing results. The result of this work is an ISFET with silicon nitride as the gate material.
Keywords :
etching; ion sensitive field effect transistors; silicon compounds; ISFET structure; MOSFET; SiO2-Si3N4; buffered oxide etching; gate metal electrode; metal oxide semiconductor field-effect transistor; self-aligned method; silicon nitride ion sensitive field-effect transistor; silicon oxide; Electrodes; Fabrication; Logic gates; Resists; Sensors; Silicon; Titanium; ISFET; etching; ion sensitive; mask;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro and Nanoelectronics (RSM), 2013 IEEE Regional Symposium on
Conference_Location :
Langkawi
Print_ISBN :
978-1-4799-1181-3
Type :
conf
DOI :
10.1109/RSM.2013.6706509
Filename :
6706509
Link To Document :
بازگشت