Title :
Structural properties of Al-doped ZnO thin films deposited by Sol-Gel spin-coating method
Author :
Shafura, A.K. ; Md Sin, N.D. ; Mamat, M.H. ; Uzer, M. ; Mohamad, A. ; Rusop, M.
Author_Institution :
Fac. of Electr. Eng., Univ. Teknol. MARA, Shah Alam, Malaysia
Abstract :
Nanostructured Aluminium (Al) doped zinc oxide (ZnO) has been prepared using sol-gel spin-coating method. The annealing temperature was varied and the effect on the surface characteristic of ZnO thin film was studied. The surface topography and morphology of the thin films were characterised using X-ray Diffractometer (XRD), Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM). The paper reveals the effect of annealing temperature and Al doping on the surface characteristic of ZnO thin film. At optimum annealing temperature with doping, the ZnO thin film was observed to have more porous structure with smaller grain size which might enhance the gas sensing performance.
Keywords :
II-VI semiconductors; X-ray diffraction; aluminium; annealing; atomic force microscopy; field emission electron microscopy; gas sensors; grain size; nanofabrication; nanostructured materials; porous materials; scanning electron microscopy; semiconductor doping; semiconductor thin films; sol-gel processing; spin coating; surface morphology; surface topography; wide band gap semiconductors; zinc compounds; AFM; Al-doped ZnO thin films; FESEM; X-ray diffractometer; XRD; ZnO:Al; annealing temperature effect; atomic force microscopy; field emission scanning electron microscopy; gas sensing performance; grain size; nanostructured Al doped ZnO; optimum annealing temperature; porous structure; sol-gel spin coating method; sol-gel spin-coating method; structural properties; surface characteristic effect; surface morphology; surface topography; Annealing; Films; Gas detectors; Grain size; Substrates; Surface morphology; Zinc oxide; Aluminium doped Zinc oxide; gas sensing perfomance; grain size; sol-gel spin-coating method;
Conference_Titel :
Micro and Nanoelectronics (RSM), 2013 IEEE Regional Symposium on
Conference_Location :
Langkawi
Print_ISBN :
978-1-4799-1181-3
DOI :
10.1109/RSM.2013.6706537