DocumentCode :
671243
Title :
Numerical study of side gate junction-less transistor in on state
Author :
Dehzangi, Abdollah ; Larki, Farhad ; Majlis, Burhanuddin Yeop ; Hamidon, Mohd Nizar ; Navasery, Manizheh ; Gharibshahi, Elham ; Khalilzadeh, Nasrin ; Vakilian, Mehdi ; Saion, Elias B.
Author_Institution :
Inst. of Microeng. & Nanoelectron. (IMEN), Univ. Kebangsaan Malaysia, Bangi, Malaysia
fYear :
2013
fDate :
25-27 Sept. 2013
Firstpage :
398
Lastpage :
401
Abstract :
Side gate p-type Junctionless Silicon transistor is fabricated by AFM nanolithography on low-doped (105 cm-3) SOI wafer. In this work, the simulation characteristic of the device using TCAD Sentaurus in on state will be studied. The results show that the device is the pinch off transistor, works in on state for zero gate voltage in depletion mode. Negative gate voltage drives the device into on state, but unable to make significant effect on drain current as accmulation mode. Simulation results for valence band energy, electric field and hole density are investigated along the active regions. The influence of the electric field due to the applied voltages of VDS and VG on charge distribution is much more when the device operates at the saturation region. The hole quasi-Fermi level has a positive slope showing the current flows from source to drain.
Keywords :
atomic force microscopy; field effect transistors; hole density; nanolithography; semiconductor device models; silicon-on-insulator; technology CAD (electronics); valence bands; AFM nanolithography; Si; TCAD Sentaurus; accmulation mode; depletion mode; drain current; electric field; hole density; hole quasiFermi level; low-doped SOI wafer; negative gate voltage; on state; pinch off transistor; side gate junction-less transistor; simulation characteristic; valence band energy; zero gate voltage; Doping; Electric fields; Logic gates; Nanoscale devices; Silicon; Simulation; Transistors; Side gate Junctionless Transistors (SGJLT); hole density distribution; valence band energy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro and Nanoelectronics (RSM), 2013 IEEE Regional Symposium on
Conference_Location :
Langkawi
Print_ISBN :
978-1-4799-1181-3
Type :
conf
DOI :
10.1109/RSM.2013.6706575
Filename :
6706575
Link To Document :
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