DocumentCode :
671275
Title :
Degradation processes in high-power diode lasers under external optical feedback
Author :
Tomm, Jens W. ; Hempel, Michael ; Mingjun Chi ; Petersen, P.M. ; Zeimer, U. ; Weyers, M.
Author_Institution :
Max-Born-Inst. fur Nichtlineare Opt. und Kurzzeitspektroskopie, Berlin, Germany
fYear :
2013
fDate :
16-17 Oct. 2013
Firstpage :
42
Lastpage :
43
Abstract :
The effect of moderate external feedback on the gradual degradation of 808 nm emitting AlGaAs-based high-power broad-area diode lasers is analyzed. Eventually the quantum well that actually experiences the highest total optical load remains unaffected by the aging, while severe impact to the waveguide by point defects is observed.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser feedback; optical waveguides; quantum well lasers; AlGaAs; degradation processes; external optical feedback; high-power broad-area diode lasers; optical load; point defects; quantum well; waveguide; wavelength 808 nm; Aging; Degradation; Diode lasers; Laser beams; Measurement by laser beam; Optical feedback; Optical waveguides; Degradation; Diode lasers; Laser feedback; Optical feedback;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Power Diode Lasers and Systems Conference (HPD), 2013
Conference_Location :
Coventry
Print_ISBN :
978-1-4799-2747-0
Type :
conf
DOI :
10.1109/HPD.2013.6706609
Filename :
6706609
Link To Document :
بازگشت