DocumentCode
671275
Title
Degradation processes in high-power diode lasers under external optical feedback
Author
Tomm, Jens W. ; Hempel, Michael ; Mingjun Chi ; Petersen, P.M. ; Zeimer, U. ; Weyers, M.
Author_Institution
Max-Born-Inst. fur Nichtlineare Opt. und Kurzzeitspektroskopie, Berlin, Germany
fYear
2013
fDate
16-17 Oct. 2013
Firstpage
42
Lastpage
43
Abstract
The effect of moderate external feedback on the gradual degradation of 808 nm emitting AlGaAs-based high-power broad-area diode lasers is analyzed. Eventually the quantum well that actually experiences the highest total optical load remains unaffected by the aging, while severe impact to the waveguide by point defects is observed.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; laser feedback; optical waveguides; quantum well lasers; AlGaAs; degradation processes; external optical feedback; high-power broad-area diode lasers; optical load; point defects; quantum well; waveguide; wavelength 808 nm; Aging; Degradation; Diode lasers; Laser beams; Measurement by laser beam; Optical feedback; Optical waveguides; Degradation; Diode lasers; Laser feedback; Optical feedback;
fLanguage
English
Publisher
ieee
Conference_Titel
High Power Diode Lasers and Systems Conference (HPD), 2013
Conference_Location
Coventry
Print_ISBN
978-1-4799-2747-0
Type
conf
DOI
10.1109/HPD.2013.6706609
Filename
6706609
Link To Document