Analysis of hot spot temperature in power Si MOSFET with electro-thermal analysis

In recent years, electronics has been downsizing, and thermal problem becomes more serious. Therefore, more accurate thermal design is required for improvement of electronics reliability. For more accurate thermal design, we should consider temperature distribution of a chip. In a chip, a lot of semiconductor devices are mounted. Therefore, to investigate temperature distribution of a chip, temperature distribution of a semiconductor device should be obtained. Power Si MOSFET is widely used in car electronics as a semiconductor device. However, the thermal properties of power Si MOSFET are not clear. Therefore, we focus on power Si MOSFET, and discuss thermal properties using electro-thermal analysis. The calculation results show a hot spot appears in power Si MOSFET, and the hot spot temperature is higher with increase in applied voltage. Furthermore, the appearance position of the hot spot is almost the same in any analysis condition when applied voltage is changed.