DocumentCode :
671293
Title :
Design and reliability analysis of voltage reference circuit in 180 nm CMOS process
Author :
Takahashi, Y. ; Sato, Hikaru ; Sekine, Taku
Author_Institution :
Dept. of Electr., Electron. & Comput. Eng., Gifu Univ., Gifu, Japan
fYear :
2013
fDate :
22-25 Oct. 2013
Firstpage :
251
Lastpage :
254
Abstract :
This paper investigates the reliability of voltage reference circuit from the viewpoint of LSI layout design. In the LSI layout design, guard ring structure, voltage/ground source impedance, and location of MOS finger are very important factor, and therefore we designed two types; the one is without any consideration of layout factor, the one is considered. From the measurement results, we conduce that robust circuit requires guard ring strongly tied to ground, wide voltage/ground line, and MOS finger which is oriented in the same direction.
Keywords :
CMOS integrated circuits; integrated circuit design; integrated circuit reliability; large scale integration; reference circuits; CMOS process; LSI layout design; MOS finger; guard ring structure; reliability analysis; size 180 nm; voltage ground source impedance; voltage reference circuit; Capacitors; Clocks; Fingers; Large scale integration; Layout; Temperature measurement; Voltage measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2013 8th International
Conference_Location :
Taipei
ISSN :
2150-5934
Type :
conf
DOI :
10.1109/IMPACT.2013.6706629
Filename :
6706629
Link To Document :
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