Thermal stability of hydrogen annealed aluminum doped zinc oxide films investigated by thermal desorption spectroscopy

Author

Shang-Chou Chang ; Shang-Chao Hung ; Tien-Chai Lin ; Tseng-An Yu ; Tsi-Yi Gian ; To-Sing Li

Author_Institution

Dept. of Electr. Eng., Kun Shan Univ., Tainan, Taiwan

fYear

2013

fDate

22-25 Oct. 2013

Firstpage

279

Lastpage

282

Abstract

To investigate thermal stability of hydrogen annealed aluminum doped zinc oxide (AZO) films, hydrogen annealed AZO films were measured with thermal desorption system and their thermal desorption spectroscopy (TDS) were analyzed. The measured TDS results indicate all three elements in AZO films: oxygen, aluminum and zinc are observed. The result indicates the aluminum impurity in hydrogen annealed AZO films is thermally unstable, and implies the doped aluminum does not stay in the substituted zinc site in AZO films to some extent. The hydrogen annealed AZO films prepared at 200°C substrate is recommended to apply since it shows relatively good thermal stability considering total atomic desorption amount, electric resistivity and average optic transmittance´s percentage variation.

Keywords

II-VI semiconductors; aluminium; annealing; electrical resistivity; semiconductor thin films; thermal stability; thermally stimulated desorption; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; TDS; ZnO:Al; aluminum impurity; atomic desorption; electric resistivity; hydrogen annealed aluminum doped zinc oxide films; optic transmittance; temperature 200 degC; thermal desorption spectroscopy; thermal stability; Aluminum; Annealing; Hydrogen; Optical films; Substrates; Thermal stability; AZO; hydrogen annealing; thermal desorption spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2013 8th International

Conference_Location

Taipei

ISSN

2150-5934

Type

conf

DOI

10.1109/IMPACT.2013.6706639

Filename

6706639