Title :
Thermal stability of hydrogen annealed aluminum doped zinc oxide films investigated by thermal desorption spectroscopy
Author :
Shang-Chou Chang ; Shang-Chao Hung ; Tien-Chai Lin ; Tseng-An Yu ; Tsi-Yi Gian ; To-Sing Li
Author_Institution :
Dept. of Electr. Eng., Kun Shan Univ., Tainan, Taiwan
Abstract :
To investigate thermal stability of hydrogen annealed aluminum doped zinc oxide (AZO) films, hydrogen annealed AZO films were measured with thermal desorption system and their thermal desorption spectroscopy (TDS) were analyzed. The measured TDS results indicate all three elements in AZO films: oxygen, aluminum and zinc are observed. The result indicates the aluminum impurity in hydrogen annealed AZO films is thermally unstable, and implies the doped aluminum does not stay in the substituted zinc site in AZO films to some extent. The hydrogen annealed AZO films prepared at 200°C substrate is recommended to apply since it shows relatively good thermal stability considering total atomic desorption amount, electric resistivity and average optic transmittance´s percentage variation.
Keywords :
II-VI semiconductors; aluminium; annealing; electrical resistivity; semiconductor thin films; thermal stability; thermally stimulated desorption; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; TDS; ZnO:Al; aluminum impurity; atomic desorption; electric resistivity; hydrogen annealed aluminum doped zinc oxide films; optic transmittance; temperature 200 degC; thermal desorption spectroscopy; thermal stability; Aluminum; Annealing; Hydrogen; Optical films; Substrates; Thermal stability; AZO; hydrogen annealing; thermal desorption spectroscopy;
Conference_Titel :
Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2013 8th International
Conference_Location :
Taipei
DOI :
10.1109/IMPACT.2013.6706639
