DocumentCode
671351
Title
Electrochemical migration failure on FR-4 PCB by hygro-thermo-vapor pressure coupled analysis
Author
Hsiang-Chen Hsu ; Shih-Jeh Wu ; Feng-Jui Hsu ; Meng-Chieh Weng ; Shen-Li Fu
Author_Institution
Dept. of Mech. & Autom. Eng., I-Shou Univ., Kaohsiung, Taiwan
fYear
2013
fDate
22-25 Oct. 2013
Firstpage
166
Lastpage
169
Abstract
Corrosion reliability recently becomes an issue due to the trend of miniaturization of electronic products. The phenomenon of electronic corrosion is ionic migration which is also known as electrochemical migration (ECM) by surplus moisture remained inside the package. High temperature may also deteriorate the ECM failure. The hydrated metal ions (positively charged) will migrate towards the cathode and form a dendrite. In this paper, electrochemical migration failure caused by hygro-thermal swelling and residual moisture has been carefully investigated for FR-4 PCB board plated with Cu. An analytical moisture diffusion solution is proposed to determine the moisture distribution and consequent hygroscopic induced strain as well as stress. By applying Fickian diffusion law, the “thermal wetness” analogous technique is used to solve moisture absorption and desorption models. The analytical expression for total expansion strain due to hygro-thermo-vapor pressure coupled effect is implemented using finite element software ANSYS. Finite element predictions reveal the significance of contribution of hygroswelling induced effective stress/strain. Hygroscopic properties such as moisture diffusivity and coefficient of moisture expansion are characterized by an integrated TMA/TGA scheme. Solubility and vapor pressure effect are included to study popcorn failure during reflow process.
Keywords
copper; diffusion; electrochemistry; electromigration; finite element analysis; moisture; printed circuits; solubility; ANSYS; FR-4 PCB; Fickian diffusion law; electrochemical migration failure; finite element software; hygro-thermal swelling; hygro-thermo-vapor pressure coupled analysis; hygroscopic induced strain; integrated TMA/TGA scheme; moisture absorption; moisture desorption; moisture diffusion solution; moisture diffusivity; moisture expansion coefficient; popcorn failure; reflow process; residual moisture; solubility; stress; thermal wetness analogous technique; vapor pressure effect; Electronic countermeasures; Equations; Materials; Mathematical model; Moisture; Strain; Stress; electrochemical migration (ECM); hygro-thermo-vapor pressure; ionic migration;
fLanguage
English
Publisher
ieee
Conference_Titel
Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT), 2013 8th International
Conference_Location
Taipei
ISSN
2150-5934
Type
conf
DOI
10.1109/IMPACT.2013.6706687
Filename
6706687
Link To Document