Comprehensive device reliability and oxide traps distribution analysis by the low frequency noise in ultra-thin body SOI (UTBSOI) MOSFETs

Author

Cheng-Li Lin ; Chun-Hung Soh ; Wen-Kuan Yeh ; Chien-Ting Lin ; Chun-Ming Wu ; Yao-Hsiang Yang ; Wei-Yi Chang ; Yen-Lun Huang

Author_Institution

Dept. of Electron. Eng., Feng Chia Univ., Taichung, Taiwan

fYear

2013

fDate

6-9 Oct. 2013

Firstpage

1

Lastpage

4

Abstract

This study investigates the device characteristics of the ultra-thin body (UTB) SOI MOSFETs with different channel lengths. The device reliability, body charging effect, and oxide trap distribution are also studied. The P-type device reveals more degradation of the threshold voltage than that of N-type device as decreasing the channel length. For the effect of body charging on ultra-thin Si-body, the N-type device appears more serious body-charging effect than that of the P-type device. Additionally, the N-type body-tied UTB SOI MOSFETs w/ and w/o body grounded shows the bulk oxide trap (N_BOT) at the SiO₂/Si interface is larger than that at poly-Si-gate/SiO₂ interface. Additionally, the N-type device reveals the correlated-carrier number mobility fluctuation. For P-type device, the similar carrier-fluctuation appears in the HCI test, but the BTI stress enhances the phenomenon of the carrier-number fluctuation.

Keywords

MOSFET; carrier mobility; elemental semiconductors; fluctuations; interface states; semiconductor device reliability; silicon; silicon-on-insulator; Si; body charging effect; correlated-carrier number mobility fluctuation; device reliability; low frequency noise; oxide trap distribution analysis; p-type device; threshold voltage; ultra-thin body SOl MOSFET; Fabrication; Fluctuations; Iron; MOSFET; Noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference (NMDC), 2013 IEEE 8th

Conference_Location

Tainan

Print_ISBN

978-1-4799-3386-0

Type

conf

DOI

10.1109/NMDC.2013.6707460

Filename

6707460