Title :
Development of ultra-violet sensing devices with zinc-oxide thin-films on oxidized nano-porous-silicon substrates
Author :
Kuen-Hsien Wu ; Chia-Chun Tang ; Sheng-Chun Lin
Author_Institution :
Dept. of Electro-Opt. Eng., Southern Taiwan Univ. of Sci. & Technol., Taiwan
Abstract :
This paper demonstrated the deposition of zinc oxide (ZnO) thin films on oxidized nano-porous-Si (ONPS) substrates. Ultra-violet (UV) sensing devices based on the developed ZnO films had been fabricated and exhibited high photo-responsivity for 300~400-nm incident UV light. The ZnO-on-ONPS devices got a large photo-to-dark current ratio up to 104 at an incident wavelength of 375 nm, indicating their high potential for development of low-cost UV photodetectors.
Keywords :
II-VI semiconductors; nanoporous materials; photoconductivity; photodetectors; porous semiconductors; semiconductor thin films; ultraviolet detectors; wide band gap semiconductors; Si; ZnO; ZnO-on-ONPS devices; low-cost UV photodetectors; oxidized nano-porous-silicon substrates; photo-to-dark current ratio; ultra-violet sensing devices; wavelength 300 nm to 400 nm; zinc-oxide thin-films; Absorption; Current measurement; Electronic mail; Photodetectors; Photoluminescence; Temperature sensors; Wavelength measurement;
Conference_Titel :
Nanotechnology Materials and Devices Conference (NMDC), 2013 IEEE 8th
Conference_Location :
Tainan
Print_ISBN :
978-1-4799-3386-0
DOI :
10.1109/NMDC.2013.6707467
