Title :
Solution-Processed PbSe Colloidal Quantum Dot-Based Near-Infrared Photodetector
Author :
Haowei Wang ; Zhixiao Li ; Chunjie Fu ; Dan Yang ; Li Zhang ; Shengyi Yang ; Bingsuo Zou
Author_Institution :
Beijing Key Lab. of Nanophotonics & Ultrafine Optoelectron. Syst., Beijing Inst. of Technol., Beijing, China
Abstract :
A solution-processed near-infrared (NIR) photodetector based on PbSe colloidal quantum dots (CQDs) with a field-effect transistor (FET) configuration was presented. By blending PbSe CQDs into poly(3-hexylthiophene-2, 5-diyl) (P3HT) as active layer, the photosensitive spectrum of P3HT:PbSe nanocomposites extends into the NIR region. The responsivity and the specific detectivity of FET-based photodetector Au(gate)/PMMA (930nm)/P3HT:PbSe(55nm)/Au(source, drain) reached 500 A/W and 5.02 × 1012 Jones, respectively, at VDS = -40 V and VG = -40 V with 40 mW/cm2 of 980-nm laser illumination. It gets more stable due to its reverse fabrication using the dielectric layer to cover the active layer from environment air.
Keywords :
IV-VI semiconductors; colloids; dielectric materials; field effect transistors; gold; infrared detectors; infrared spectra; laser materials processing; lighting; nanocomposites; nanofabrication; nanophotonics; optical fabrication; photodetectors; semiconductor quantum dots; Au-PbSe; NIR region; dielectric layer; field-effect transistor configuration; laser illumination; optical fabrication; poly(3-hexylthiophene-2, 5-diyl):lead selenide nanocomposites; solution-processed lead selenide colloidal quantum dot-based near-infrared photodetector; voltage -40 V; wavelength 980 nm; Absorption; Lasers; Lighting; Nanocomposites; Nanocrystals; Photoconductivity; Photodetectors; Lead selenide (PbSe; Lead selenide (PbSe); colloidal quantum dots (CQDs); field-effect transistor (FET); near infrared; photodetector;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2014.2386342
