Common cathode VCSEL driver in 90 nm CMOS enabling 25 Gbit/s optical connection using 14 Gbit/s 850 nm VCSEL

Author

Belfiore, G. ; Szilagyi, L. ; Henker, R. ; Ellinger, F.

Author_Institution

Dept. of Circuit Design & Network Theor., Tech. Univ. Dresden, Dresden, Germany

Volume

51

Issue

4

fYear

2015

fDate

2 19 2015

Firstpage

349

Lastpage

351

Abstract

The design and electro-optical measurements of a 25 Gbit/s common cathode vertical cavity surface-emitting laser (VCSEL) driver in 90 nm bulk CMOS technology is presented. The driver is bonded to a 14 Gbit/s commercial VCSEL providing both DC and modulation current to the laser. The power consumption including the VCSEL is 60 mW. Since the DC bias of the VCSEL exceeds the breakdown voltage of thin oxide transistors, a novel output stage configuration using isolated wells is proposed. The active area is only 127 × 50 μm.

Keywords

CMOS integrated circuits; cathodes; electro-optical devices; integrated optics; integrated optoelectronics; laser cavity resonators; optical design techniques; optical interconnections; optical modulation; surface emitting lasers; CMOS; bit rate 14 Gbit/s; bit rate 25 Gbit/s; breakdown voltage; bulk CMOS technology; common cathode VCSEL driver; electrooptical measurements; modulation current; optical connection; output stage configuration; power 60 mW; power consumption; thin oxide transistors; vertical cavity surface emitting laser; wavelength 850 nm; wavelength 90 nm;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el.2014.4217

Filename

7042433