Title :
Slant Field Plate Model for Field-Effect Transistors
Author_Institution :
Dept. of R&D, TriQuint, Richardson, TX, USA
Abstract :
The simplified field plate model for field-effect transistors previously introduced is further developed to allow arbitrary transition angles between gate and field plate or adjacent field plates. The model shows that transition angles less than 30° (measured from the surface) can result in significant improvements in electric field management.
Keywords :
field effect transistors; semiconductor device models; adjacent field plates; arbitrary transition angles; electric field management; field-effect transistors; simplified field plate model; slant field plate model; Capacitance; Electric potential; Insulators; Logic gates; Metals; Permittivity; Transistors; Electric field effects; field-effect transistors (FETs); high-voltage techniques; power semiconductor devices; semiconductor device breakdown; transistors; transistors.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2014.2329475
