Hybrid UV Active Pixel Sensor Implemented Using GaN MSM UV Sensor and Si-Based Circuit

Author

Chang-Ju Lee ; Chul-Ho Won ; Myunghan Bae ; Jang-Kyoo Shin ; Jung-Hee Lee ; Sung-Ho Hahm

Author_Institution

Sch. of Electron. Eng., Kyungpook Nat. Univ., Daegu, South Korea

Volume

15

Issue

9

fYear

2015

fDate

Sept. 2015

Firstpage

5071

Lastpage

5074

Abstract

A hybrid active pixel sensor (APS) was implemented for ultraviolet (UV) imagers by combining a metal- semiconductor-metal (MSM)-type GaN UV sensor and a standard Si CMOS APS controller. The photodetector region of the APS circuit was replaced by a GaN MSM UV sensor, and it was connected together on the printed circuit board with standard Si CMOS APS circuit chip. The dark and photoresponsive current densities of the fabricated MSM UV sensor were 2.5 × 10^-6 and 1.6 × 10^-3 A/cm², respectively, at 10 V bias. The fabricated hybrid UV APS has clearly distinguishable ON/OFF operation states under dark and 365-nm UV irradiation conditions. The calculated photoresponsivity of the hybrid-type GaN UV APS was as high as 5.1 V/W.

Keywords

CMOS image sensors; III-V semiconductors; current density; elemental semiconductors; gallium compounds; metal-semiconductor-metal structures; photodetectors; printed circuits; silicon; ultraviolet detectors; wide band gap semiconductors; CMOS APS circuit chip; CMOS APS controller; GaN-Si; MSM UV image sensor; UV irradiation condition; dark current density; hybrid UV active pixel sensor; metal-semiconductor-metal type; photodetector; photoresponsive current density; printed circuit board; size 365 nm; ultraviolet imager; voltage 10 V; CMOS integrated circuits; Gallium nitride; Photodetectors; Radiation effects; Sensor phenomena and characterization; Silicon; GaN; Hybrid UV APS; MSM; UV image sensor; UV sensor; hybrid UV APS;

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2015.2433939

Filename

7109105