DocumentCode :
67367
Title :
Lifetime Enhancement Techniques for PCM-Based Image Buffer in Multimedia Applications
Author :
Yuntan Fang ; Huawei Li ; Xiaowei Li
Author_Institution :
State Key Lab. of Comput. Archit., Univ. of Chinese Acad. of Sci., Beijing, China
Volume :
22
Issue :
6
fYear :
2014
fDate :
Jun-14
Firstpage :
1450
Lastpage :
1455
Abstract :
Emerging nonvolatile memories such as phase change memory (PCM) have the potential to replace internal memories in embedded devices. In this brief, we propose to use PCM as image buffer in application-specific multimedia systems. To improve the lifetime of PCM-based image buffer, we first eliminate redundant writes using data comparison. After redundant write elimination, PCM cells with respect to lower order bits of pixels are written more frequently than those corresponding to higher order. Based on this observation, we show that the lifetime can be further improved either by wear leveling using periodical data reversion to make write traffic even across PCM cells or by application-level error tolerance evaluation without leveling. Experimental results demonstrate that with the proposed techniques, the lifetime of PCM-based image buffer can be improved significantly.
Keywords :
buffer storage; image enhancement; multimedia systems; phase change memories; PCM cells; PCM-based image buffer; application-level error tolerance evaluation; application-specific multimedia systems; data comparison; embedded devices; internal memories; lifetime enhancement techniques; multimedia applications; nonvolatile memories; periodical data reversion; phase change memory; redundant write elimination; wear leveling; write traffic; Nonvolatile memory; Phase change materials; Phase change memory; Random access memory; Streaming media; Very large scale integration; Video sequences; Error tolerance; phase change memory (PCM); wear leveling; write traffic reduction; write traffic reduction.;
fLanguage :
English
Journal_Title :
Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
1063-8210
Type :
jour
DOI :
10.1109/TVLSI.2013.2266668
Filename :
6573408
Link To Document :
بازگشت