Full-wave electromagnetic modeling of terahertz RTD-gated HEMTs

Author

Tenneti, S. ; Nahar, Niru K. ; Volakis, J.L.

Author_Institution

Electr. & Comput. Eng. Dept., Ohio State Univ., Columbus, OH, USA

fYear

2013

fDate

7-13 July 2013

Firstpage

1136

Lastpage

1137

Abstract

Full-wave analysis has been extensively used in the past to model traveling-wave transistors. However, no design has incorporated resonant tunneling diode structures to assess their resonance and gain. In this investigation, finite element (frequency-domain) and finite-difference time-domain techniques are used to model the performance of a HEMT/RTD integrated structure. These structures are unique as they have the potential to resonate at terahertz frequencies. In this paper, an RTD-gated structure is designed and shown to deliver nearly 4 dB of gain.

Keywords

finite difference time-domain analysis; finite element analysis; frequency-domain analysis; high electron mobility transistors; resonant tunnelling devices; finite element techniques; finite-difference time-domain techniques; frequency-domain techniques; full-wave analysis; full-wave electromagnetic modeling; resonant tunneling diode structures; terahertz RTD-gated HEMT; traveling-wave transistors; Finite difference methods; Finite element analysis; Gallium nitride; HEMTs; Integrated circuit modeling; MODFETs; Time-domain analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation Society International Symposium (APSURSI), 2013 IEEE

Conference_Location

Orlando, FL

ISSN

1522-3965

Print_ISBN

978-1-4673-5315-1

Type

conf

DOI

10.1109/APS.2013.6711228

Filename

6711228