A Hybrid a-Si and Poly-Si TFTs Technology for AMOLED Pixel Circuits

Author

Longyan Wang ; Lei Sun ; Dedong Han ; Yi Wang ; Mansun Chan ; Shengdong Zhang

Author_Institution

Inst. of Microelectron., Peking Univ., Beijing, China

Volume

10

Issue

4

fYear

2014

fDate

Apr-14

Firstpage

317

Lastpage

320

Abstract

A hybrid thin film transistor (TFT) technology is proposed and demonstrated, which features a simultaneous fabrication of amorphous silicon (a-Si) TFTs with low off-current and polycrystalline silicon (poly-Si) TFTs with high carrier mobility on one substrate in one single process. For the a-Si TFT fabrication, the active film is the as-deposited LPCVD a-Si film, whereas, for the poly-Si TFT fabrication, the poly-Si active film is the locally crystallized LPCVD a-Si film. The localized crystallization is realized via using metal-induced lateral crystallization (MILC) method. This proposed technology is applicable to active-matrix organic light-emitting diode (AMOLED) pixel circuits where switching TFTs and driving TFTs are required to be with low off-current and high on-current, respectively.

Keywords

LED displays; amorphous semiconductors; carrier mobility; crystallisation; driver circuits; elemental semiconductors; organic light emitting diodes; silicon; thin film circuits; thin film transistors; AMOLED pixel circuit; MILC method; Si; active matrix organic light emitting diode; amorphous silicon; carrier mobility; driving TFT; hybrid a-Si TFT fabrication technology; localized crystallization; metal induced lateral crystallization; poly-Si TFT fabrication technology; polycrystalline silicon; switching TFT; thin film transistor; Active matrix organic light emitting diodes; Fabrication; Films; Logic gates; Substrates; Thin film transistors; Active-matrix organic light-emitting diode (AMOLED); amorphous silicon (a-Si); metal-induced lateral crystallization (MILC); polycrystalline silicon (poly-Si); thin film transistor (TFT);

fLanguage

English

Journal_Title

Display Technology, Journal of

Publisher

ieee

ISSN

1551-319X

Type

jour

DOI

10.1109/JDT.2014.2301554

Filename

6716954