DocumentCode :
674414
Title :
Evaluation of chip temperature for multichip IGBT modules by using the thermo-sensitive electrical parameter (TSEP)
Author :
Qiu Zhijie ; Zhang Jin ; Wen Xuhui
Author_Institution :
Key Lab. of Power Electron. & Electr. Drives, Beijing Eng. Lab. of Electr. Drive Syst. & Power Electron. Device Packaging Technol., Inst. of Electr. Eng., Beijing, China
fYear :
2013
fDate :
26-29 Oct. 2013
Firstpage :
1800
Lastpage :
1803
Abstract :
The thermo-sensitive electrical parameters (TSEPs) is often used for evaluating junction temperature of power semiconductor device due to its convenient and fast measurement. However, this method can not establish a temperature map inside a module with individual or multiple chips connected in parallel. A novel inverse method is proposed in this paper to obtain the temperature distribution for multiple chips by taking several measurements under different electrical conditions. Infrared (IR) measurements were also carried out for comparison.
Keywords :
insulated gate bipolar transistors; inverse problems; temperature distribution; temperature measurement; IR measurements; TSEP; chip temperature evaluation; infrared measurements; inverse method; multichip IGBT modules; temperature distribution; thermo-sensitive electrical parameter; Current measurement; Insulated gate bipolar transistors; Semiconductor device measurement; Temperature distribution; Temperature measurement; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Machines and Systems (ICEMS), 2013 International Conference on
Conference_Location :
Busan
Print_ISBN :
978-1-4799-1446-3
Type :
conf
DOI :
10.1109/ICEMS.2013.6713275
Filename :
6713275
Link To Document :
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