• DocumentCode
    674814
  • Title

    Large post-growth energy band-gap tuning of the 980 nm high power laser diode structures

  • Author

    Tang Xiaohong ; Qiao Zhongliang ; Lim Peng Huei ; Bo baoxue

  • Author_Institution
    OPTIMUS: Photonics Center of Excellence, Nanyang Technol. Univ., Singapore, Singapore
  • fYear
    2013
  • fDate
    28-30 Nov. 2013
  • Firstpage
    453
  • Lastpage
    457
  • Abstract
    Post-growth energy band gap turning of the 980nm high power semiconductor laser structure through the quantum well intermixing (QWI) has been investigated. The QWI was carried out by depositing a thin film of SiO2 on top surface of the laser structure samples and followed by high temperature annealing. By using the QWI technique, band gap energy of the 980nm quantum well structure has been blue shifted up to >220nm. High quality of the laser diode structure after the QWI has been confirmed by fabricating the high performance semiconductor lasers using the wafer after the QWI.
  • Keywords
    annealing; energy gap; gallium arsenide; indium compounds; laser tuning; optical fabrication; quantum well lasers; silicon compounds; QWI; SiO2-In0.24Ga0.76As0.52P0.48-In0.24Ga0.76As-GaAs; blue shifting; high performance semiconductor laser fabrication; high power laser diode structures; high temperature annealing; large post-growth energy bandgap tuning; quantum well intermixing; thin film deposition; wavelength 980 nm; Annealing; Indium gallium arsenide; Photonic band gap; Quantum well lasers; Temperature measurement; Tuning; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical and Electronics Engineering (ELECO), 2013 8th International Conference on
  • Conference_Location
    Bursa
  • Print_ISBN
    978-605-01-0504-9
  • Type

    conf

  • DOI
    10.1109/ELECO.2013.6713883
  • Filename
    6713883
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=674814