Flip-chip InGaN light-emitting diodes with an integrated microlens array

Author

Li, K.H. ; Choi, Hyung Woo

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China

fYear

2013

fDate

27-30 Oct. 2013

Firstpage

1

Lastpage

2

Abstract

The fabrication of hexagonally close-packed lens array on flip-chip bonded InGaN LED by nanosphere lithography is reported. A self-assembled monolayer of silica spheres with diameters of 1-μm serves as an etch mask to be transferred onto the sapphire face of the LED to form hemispherical lenses. Without degrading electrical characteristic, the light output power of lensed LED is increased by more than one-quart, compared with an unpatterned LED. The optical behavior of individual lenses and converging effect of lensed LED are by ray-tracing and confocal imaging.

Keywords

III-V semiconductors; gallium compounds; indium compounds; integrated optics; light emitting diodes; microlenses; monolayers; nanolithography; optical fabrication; optical information processing; ray tracing; sapphire; self-assembly; silicon compounds; Al₂O₃; InGaN-SiO₂; confocal imaging; electrical characteristics; etch mask; flip-chip light-emitting diodes; hemispherical lenses; hexagonally close-packed lens array; integrated microlens array; nanosphere lithography; optical behavior; optical fabrication; ray-tracing; sapphire face; self-assembled monolayer; silica spheres; size 1 mum; Arrays; Flip-chip devices; Imaging; Lenses; Light emitting diodes; Microoptics; Self-assembly;

fLanguage

English

Publisher

ieee

Conference_Titel

Microoptics Conference (MOC), 2013 18th

Conference_Location

Tokyo

Type

conf

Filename

6715173