DocumentCode :
675275
Title :
Flip-chip InGaN light-emitting diodes with an integrated microlens array
Author :
Li, K.H. ; Choi, Hyung Woo
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
fYear :
2013
fDate :
27-30 Oct. 2013
Firstpage :
1
Lastpage :
2
Abstract :
The fabrication of hexagonally close-packed lens array on flip-chip bonded InGaN LED by nanosphere lithography is reported. A self-assembled monolayer of silica spheres with diameters of 1-μm serves as an etch mask to be transferred onto the sapphire face of the LED to form hemispherical lenses. Without degrading electrical characteristic, the light output power of lensed LED is increased by more than one-quart, compared with an unpatterned LED. The optical behavior of individual lenses and converging effect of lensed LED are by ray-tracing and confocal imaging.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; integrated optics; light emitting diodes; microlenses; monolayers; nanolithography; optical fabrication; optical information processing; ray tracing; sapphire; self-assembly; silicon compounds; Al2O3; InGaN-SiO2; confocal imaging; electrical characteristics; etch mask; flip-chip light-emitting diodes; hemispherical lenses; hexagonally close-packed lens array; integrated microlens array; nanosphere lithography; optical behavior; optical fabrication; ray-tracing; sapphire face; self-assembled monolayer; silica spheres; size 1 mum; Arrays; Flip-chip devices; Imaging; Lenses; Light emitting diodes; Microoptics; Self-assembly;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microoptics Conference (MOC), 2013 18th
Conference_Location :
Tokyo
Type :
conf
Filename :
6715173
Link To Document :
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