• DocumentCode
    675570
  • Title

    Influence of substrate rotation on the low frequency noise of strained triple-gate MuGFETs

  • Author

    de Souza, M.A.S. ; Doria, R.T. ; Simoen, Eddy ; Martino, Joao Antonio ; Claeys, Cor ; Pavanello, Marcelo Antonio

  • Author_Institution
    LSI/PSI, Univ. of Sao Paulo, Sao Paulo, Brazil
  • fYear
    2013
  • fDate
    7-10 Oct. 2013
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    This work presented an experimental study of the influence of combining the biaxial strain and 45° substrate rotation on the low-frequency noise of triple gate MuGFETs with different WFin and bias conditions. The results showed a 1/f noise characteristic for the strained and strained rotated devices in linear region, independent of WFin The strained rotated nMuGFET presents a lower LFN for narrow dimensions for practically all VGT condition, meanwhile for wider devices the opposite was found. The substrate rotation of strained MuGFETs is able to reduce the sidewall LFN.
  • Keywords
    1/f noise; field effect transistors; semiconductor device noise; substrates; 1/f noise; bias conditions; biaxial strain; low-frequency noise; strained rotated nMuGFET; strained triple gate MuGFETs; substrate rotation; Crystals; Logic gates; Low-frequency noise; Strain; Stress; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE
  • Conference_Location
    Monterey, CA
  • Type

    conf

  • DOI
    10.1109/S3S.2013.6716522
  • Filename
    6716522
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=675570