Title :
Influence of substrate rotation on the low frequency noise of strained triple-gate MuGFETs
Author :
de Souza, M.A.S. ; Doria, R.T. ; Simoen, Eddy ; Martino, Joao Antonio ; Claeys, Cor ; Pavanello, Marcelo Antonio
Author_Institution :
LSI/PSI, Univ. of Sao Paulo, Sao Paulo, Brazil
Abstract :
This work presented an experimental study of the influence of combining the biaxial strain and 45° substrate rotation on the low-frequency noise of triple gate MuGFETs with different WFin and bias conditions. The results showed a 1/f noise characteristic for the strained and strained rotated devices in linear region, independent of WFin The strained rotated nMuGFET presents a lower LFN for narrow dimensions for practically all VGT condition, meanwhile for wider devices the opposite was found. The substrate rotation of strained MuGFETs is able to reduce the sidewall LFN.
Keywords :
1/f noise; field effect transistors; semiconductor device noise; substrates; 1/f noise; bias conditions; biaxial strain; low-frequency noise; strained rotated nMuGFET; strained triple gate MuGFETs; substrate rotation; Crystals; Logic gates; Low-frequency noise; Strain; Stress; Substrates;
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE
Conference_Location :
Monterey, CA
DOI :
10.1109/S3S.2013.6716522
