Title :
Simulation of statistical variability in nanometer scale CMOS devices
Author_Institution :
Gold Stand. Simulations Ltd., Univ. of Glasgow, Glasgow, UK
Abstract :
In this paper we will present recent advances in the simulation of statistical variability and reliability in advanced CMOS devices and circuits.
Keywords :
CMOS integrated circuits; circuit simulation; integrated circuit reliability; statistical analysis; nanometer scale CMOS device; reliability; statistical variability; CMOS integrated circuits; FinFETs; Fluctuations; Integrated circuit modeling; Logic gates; Semiconductor device modeling;
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE
Conference_Location :
Monterey, CA
DOI :
10.1109/S3S.2013.6716537
