DocumentCode :
675582
Title :
UTBB FDSOI scaling enablers for the 10nm node
Author :
Grenouillet, L. ; Liu, Quanwei ; Wacquez, R. ; Morin, P. ; Loubet, N. ; Cooper, Daniel ; Pofelski, A. ; Weng, Wen-Yin ; Bauman, F. ; Gribelyuk, M. ; Wang, Yannan ; De Salvo, B. ; Gimbert, J. ; Cheng, K. ; Le Tiec, Y. ; Chanemougame, D. ; Augendre, E. ; Ma
Author_Institution :
CEA-LETI, Albany, NY, USA
fYear :
2013
fDate :
7-10 Oct. 2013
Firstpage :
1
Lastpage :
2
Abstract :
UTBB FDSOI technology is a faster, cooler and simpler technology addressing the performance/energy consumption trade-off. In this paper we present the main front-end-of-the-line knobs to scale down this promising technology to the 10nm node.
Keywords :
field effect transistors; low-power electronics; silicon-on-insulator; UTBB FDSOI technology; performance-energy consumption trade-off; scaling enablers; size 10 nm; Capacitance; Delays; Logic gates; Performance evaluation; Silicon; Strain; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE
Conference_Location :
Monterey, CA
Type :
conf
DOI :
10.1109/S3S.2013.6716546
Filename :
6716546
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=675582
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