Title :
Matching behavior of analog FDSOI n-MOS-transistors under large backgate voltage swing operating conditions
Author :
Thewes, Roland ; Enders, G. ; Hofmann, F. ; Hoenlein, W. ; Vollrath, Jorg ; Ferrant, R. ; Flatresse, Philippe ; Pelloux-Prayer, B. ; Allain, F. ; Reimbold, Gilles ; Mazure, C.
Abstract :
The fluctuations of linear and saturation mode threshold voltage of FDSOI transistors are strongly correlated. They show negligible dependence on the backgate voltage even under large backgate biasing variations. Drain current variation is also highly correlated with the threshold voltage. A calculated matching constant normalized to oxide thickness reveals excellent values of around 1 mV μm / nm.
Keywords :
MOSFET; elemental semiconductors; silicon; silicon-on-insulator; Si; analog FDSOI nMOS-transistor; drain current variation; large backgate biasing variation; large backgate voltage swing operating condition; linear mode threshold voltage; matching behavior; saturation mode threshold voltage; Correlation coefficient; Current measurement; Logic gates; Substrates; Threshold voltage; Transistors; Voltage measurement;
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE
Conference_Location :
Monterey, CA
DOI :
10.1109/S3S.2013.6716547
