DocumentCode :
675591
Title :
Analysis of Vth flexibility in ultrathin-BOX SOI FinFETs
Author :
Endo, Kazuhiro ; Ishikawa, Yozo ; Liu, Yanbing ; Matsukawa, T. ; O´uchi, S. ; Tsukada, J. ; Migita, S. ; Mizubayashi, W. ; Morita, Yusuke ; Ota, Hiroyuki ; Yamauchi, Hiroyuki ; Masahara, M.
Author_Institution :
Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan
fYear :
2013
fDate :
7-10 Oct. 2013
Firstpage :
1
Lastpage :
2
Abstract :
We have successfully demonstrated a Vth controllable multigate FinFET on a 10-nm-thick ultrathin BOX (UTB) SOI substrate. It is revealed that the Vth of the FinFET on the UTB SOI substrate is effectively modulated thanks to the improved coupling between the Si channel and the back gate. We have also carried out analysis of the Vth controllability in terms of the size dependence such as the gate length (LG) and the fin width (TFin).
Keywords :
MOSFET; silicon-on-insulator; UTB SOI substrate; back gate; fin width; gate length; silicon channel; size 10 nm; size dependence; ultrathin-BOX SOI FinFET; voltage threshold controllable multigate FinFET; voltage threshold flexibility; Controllability; Fabrication; FinFETs; Logic gates; Modulation; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE
Conference_Location :
Monterey, CA
Type :
conf
DOI :
10.1109/S3S.2013.6716563
Filename :
6716563
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=675591
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