Experimental comparative study between the diamond MOSFET and its conventional counterpart in high temperatures environment

Author

Galembeck, Egon H. S. ; Renaux, Christian ; Flandre, Denis ; Gimenez, Salvador Pinillos

Author_Institution

FEI, São Bernardo do Campo, Brazil

fYear

2013

fDate

7-10 Oct. 2013

Firstpage

1

Lastpage

2

Abstract

An experimental comparative study of the high temperature effects between the diamond SOI MOSFET (DSM) and conventional SOI MOSFET (CSM) counterparts is performed. The Diamond layout style has demonstrated better electrical performance in high temperatures environment, mainly for high-frequency analog IC applications, regarding the same gate area, aspect ratio and bias conditions. This can be justified due to the longitudinal corner effect (LCE) and PAMDLE (parallel association of MOSFETS with different channel lengths) effects remain active in the diamond layout style at high temperature.

Keywords

MOSFET; diamond; silicon-on-insulator; wide band gap semiconductors; C; Si; channel lengths; conventional SOI MOSFET; diamond SOI MOSFET; diamond layout style; electrical performance; high temperature environment; high-frequency analog IC applications; longitudinal corner effect; Diamonds; Electric fields; Junctions; Layout; Logic gates; MOSFET; Performance evaluation;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2013 IEEE

Conference_Location

Monterey, CA

Type

conf

DOI

10.1109/S3S.2013.6716568

Filename

6716568